[2607.28233] Demystifying DRAM Read Disturbance: Bridging the Gap Between Experimental Characterization and Device-Level Modeling of RowHammer and RowPress Phenomena

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arXiv:2607.28233 (cs)

[Submitted on 30 Jul 2026]

Title:Demystifying DRAM Read Disturbance: Bridging the Gap Between Experimental Characterization and Device-Level Modeling of RowHammer and RowPress Phenomena

Authors:Haocong Luo, Longda Zhou, Ataberk Olgun, İsmail Emir Yüksel, Nisa Bostanci, Zhigang Ji, Xing Wu, Onur Mutlu<br>View a PDF of the paper titled Demystifying DRAM Read Disturbance: Bridging the Gap Between Experimental Characterization and Device-Level Modeling of RowHammer and RowPress Phenomena, by Haocong Luo and 7 other authors

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Abstract:DRAM read disturbance, like RowHammer and RowPress, is a critical robustness issue where accessing DRAM can cause unintended bitflips in other unaccessed DRAM locations. DRAM read disturbance bitflips significantly impact the safe, secure, and reliable operation of DRAM-based computing systems. Many prior works experimentally characterize these bitflips and propose mitigations based on empirical results. Other device-level works study their underlying physical mechanisms, but these mechanisms do not fully explain all major empirical observations.

Our goal is to bridge the gap between experimental characterization and device-level modeling and understanding of RowHammer and RowPress, providing a principled foundation for future work on understanding, characterizing, and mitigating DRAM read disturbance. We first identify and demonstrate gaps and inconsistencies between the physical mechanisms of RowHammer and RowPress described by existing device-level models and experimental characterization of their bitflips. We focus on three fundamental metrics that should map to first-order physical mechanisms: 1) bitflip directions, 2) bitflip counts, and 3) the minimum number of aggressor row activations that trigger the first bitflips (i.e., ACmin). Second, we present a comprehensive and rigorous set of TCAD simulations that match phenomena observed in experimental characterizations of RowHammer and RowPress bitflips.

From our results, we 1) summarize updated device-level error mechanisms for understanding RowHammer and RowPress bitflips, and 2) identify key modeling and simulation parameters that significantly affect whether simulation results match real-chip characterization. We discuss implications for 1) rigorous, comprehensive, and efficient experimental characterization methodologies of DRAM read disturbance bitflips, and 2) the design of DRAM read disturbance mitigation techniques.

Subjects:

Hardware Architecture (cs.AR); Cryptography and Security (cs.CR)

Cite as:<br>arXiv:2607.28233 [cs.AR]

(or<br>arXiv:2607.28233v1 [cs.AR] for this version)

https://doi.org/10.48550/arXiv.2607.28233

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arXiv-issued DOI via DataCite (pending registration)

Submission history<br>From: Haocong Luo [view email]<br>[v1]<br>Thu, 30 Jul 2026 14:03:18 UTC (1,778 KB)

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View a PDF of the paper titled Demystifying DRAM Read Disturbance: Bridging the Gap Between Experimental Characterization and Device-Level Modeling of RowHammer and RowPress Phenomena, by Haocong Luo and 7 other authors<br>View PDF<br>HTML (experimental)<br>TeX Source

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